QTLP610CIRTR【PDF 2/6 页】EMITTER RA 940NM SMD

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RIGHT ANGLE SURFACE

MOUNT INFRARED

EMITTING DIODE

QTLP610CIR

ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C unless otherwise speci ? ed)

Parameter

Operating Temperature

Storage Temperature

Symbol

T OPR

T STG

Rating

-40 to +85

-40 to +90

Unit

° C

° C

Soldering Temperature

(Iron) (1,2,3)

T SOL-I

240 for 5 sec

° C

Soldering Temperature (Flow) (1,2)

Continuous Forward Current

Reverse Voltage

T SOL-F

I F

V R

260 for 10 sec

65

5

° C

mA

V

Power

Dissipation (4)

P D

100

mW

Peak Forward Current (Pulse width = 100μs, Duty Cycle=1%)

I FD

1.0

A

Notes:

1. RMA ? ux is recommended.

2. Methanol or isopropyl alcohols are recommended as cleaning agents.

3. Soldering iron tip at 1/16" (1.6mm) from housing

4. At 25 ° C or below

ELECTRICAL / OPTICAL CHARACTERISTICS (T A =25 ° C)

PARAMETER

Peak Emission Wavelength

Emission Angle

I F = 20 mA

I F = 20 mA

TEST CONDITIONS

SYMBOL

λ P

Θ

MIN.

—

—

TYP.

940

±80

MAX.

—

—

UNITS

nm

Deg.

I F = 20 mA

—

1.2

1.5

Forward Voltage

I F = 100 mA, t P = 100 μs, Duty Cycle = 0.01

V F

—

1.4

1.85

V

I F = 1 A, t P = 100 μs, Duty Cycle = 0.01

—

2.6

4.0

Reverse Current

V R = 5 V

I R

—

—

10

μA

I F = 20 mA

0.5

0.8

—

Radiant Intensity

I F = 100 mA, t P = 100 μs, Duty Cycle = 0.01

Ee

—

4.0

—

mW/sr

I F = 1 A, t P = 100 μs, Duty Cycle = 0.01

—

40

—

Rise Time

Fall Time

I F = 100 mA

t P = 20 ms

t r

t f

—

—

1

1

—

—

μs

μs

? 2003 Fairchild Semiconductor Corporation

Page 2 of 6

1/5/04

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