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RIGHT ANGLE SURFACE
MOUNT INFRARED
EMITTING DIODE
QTLP610CIR
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C unless otherwise speci ? ed)
Parameter
Operating Temperature
Storage Temperature
Symbol
T OPR
T STG
Rating
-40 to +85
-40 to +90
Unit
° C
° C
Soldering Temperature
(Iron) (1,2,3)
T SOL-I
240 for 5 sec
° C
Soldering Temperature (Flow) (1,2)
Continuous Forward Current
Reverse Voltage
T SOL-F
I F
V R
260 for 10 sec
65
5
° C
mA
V
Power
Dissipation (4)
P D
100
mW
Peak Forward Current (Pulse width = 100μs, Duty Cycle=1%)
I FD
1.0
A
Notes:
1. RMA ? ux is recommended.
2. Methanol or isopropyl alcohols are recommended as cleaning agents.
3. Soldering iron tip at 1/16" (1.6mm) from housing
4. At 25 ° C or below
ELECTRICAL / OPTICAL CHARACTERISTICS (T A =25 ° C)
PARAMETER
Peak Emission Wavelength
Emission Angle
I F = 20 mA
I F = 20 mA
TEST CONDITIONS
SYMBOL
λ P
Θ
MIN.
—
—
TYP.
940
±80
MAX.
—
—
UNITS
nm
Deg.
I F = 20 mA
—
1.2
1.5
Forward Voltage
I F = 100 mA, t P = 100 μs, Duty Cycle = 0.01
V F
—
1.4
1.85
V
I F = 1 A, t P = 100 μs, Duty Cycle = 0.01
—
2.6
4.0
Reverse Current
V R = 5 V
I R
—
—
10
μA
I F = 20 mA
0.5
0.8
—
Radiant Intensity
I F = 100 mA, t P = 100 μs, Duty Cycle = 0.01
Ee
—
4.0
—
mW/sr
I F = 1 A, t P = 100 μs, Duty Cycle = 0.01
—
40
—
Rise Time
Fall Time
I F = 100 mA
t P = 20 ms
t r
t f
—
—
1
1
—
—
μs
μs
? 2003 Fairchild Semiconductor Corporation
Page 2 of 6
1/5/04
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